Momenteel actieve connecties
| Naam | Geslacht | Leeftijd | Verwante bedrijven | Samenwerking |
|---|---|---|---|---|
| Jr-Tai Chen | M | - |
SweGaN AB
 SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | 10 jaar |
| David Lam | M | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
| Walter Wohlmuth | M | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
| Richard Weil | M | 55 |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | 4 jaar |
| Inga Bergström | F | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
| Fred Chang | M | - |
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | - |
Relatiegrafiek
Connectie in verschillende bedrijven
Statistieken
| Land | Connecties | % van het totaal |
|---|---|---|
| Zweden | 6 | 100.00% |
Ouderdom van de connecties
Actief
Verleden
Man
Vrouw
Besturend
Uitvoerend
Oorsprong van de connecties
- Beurs
- Insiders
- Henrik Tölander
- Persoonlijk netwerk
